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| CNY117F Vishay Semiconductors Optocoupler, Phototransistor Output, No Base Connection, 110 C Rated Features * Operating temperature from - 55 C to + 110 C * No Base Terminal Connection for Improved Common Mode Interface Immunity * Long Term Stability * Industry Standard Dual-in-Line Package * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 18216 A C NC 1 2 3 6 NC 5C 4E e3 Pb Pb-free Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending Order Information Part CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 Remarks CTR 40 - 80 %, DIP-6 CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 Applications AC adapter SMPS PLC Factory Automation Game Consoles For additional information on the available options refer to Option Information. Description The CNY117F is a 110 C rated optocoupler consisting of a Gallium Arsenide infrared emitting diode optically coupled to a silicon planar phototransistor detector in a plastic plug-in DIP-6 package. The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. In contrast to the CNY117 Series, the base terminal of the F type is not connected, resulting in a substantially improved common-mode interference immunity. Document Number 83598 Rev. 1.4, 26-Oct-04 www.vishay.com 1 CNY117F Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Derate linearly from 25 C t 10 s Test condition Symbol VR IF IFSM Pdiss Value 6.0 60 2.5 100 1.0 Unit V mA A mW mW/C Output Parameter Collector-emitter breakdown voltage Collector current t 1.0 ms Total power dissipation Derate linearly from 25 C Test condition Symbol BVCEO IC IC Pdiss Value 70 50 100 150 1.5 Unit V mA mA mW mW/C Coupler Parameter Isolation test voltage (between emitter and detector referred to standard climate 23/50 DIN 50014) Creepage Clearance Isolation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 Isolation resistance Storage temperature range Ambient temperature range Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm VIO = 500 V RIO Tstg Tamb Tsld Test condition Symbol VISO Value 5300 Unit VRMS 7.0 7.0 0.4 175 1011 - 55 to + 150 - 55 to + 110 260 mm mm mm C C C www.vishay.com 2 Document Number 83598 Rev. 1.4, 26-Oct-04 CNY117F Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Breakdown voltage Reserve current Capacitance Test condition IF = 60 mA IR = 10 A VR = 6.0 V VR = 0 V, f = 1.0 MHz Symbol VF VBR IR CO 6.0 0.01 25 10 Min Typ. 1.25 Max 1.65 Unit V V A pF Output Parameter Collector-emitter capacitance Base - collector capacitance Emitter - base capacitance Test condition VCE = 5.0 V, f = 1.0 MHz VCE = 5.0 V, f = 1.0 MHz VCE = 5.0 V, f = 1.0 MHz Symbol CCE CBC CEB Min Typ. 5.2 6.5 7.5 Max Unit pF pF pF Coupler Parameter Saturation voltage, collectoremitter Coupling capacitance Collector-emitter leakage current VCE = 10 V CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 Test condition IF = 10 mA, IC = 2.5 mA Part Symbol VCEsat CC ICEO ICEO ICEO ICEO Min Typ. 0.25 0.6 2.0 2.0 5.0 5.0 50 50 100 100 Max 0.4 Unit V pF nA nA nA nA Current Transfer Ratio Current Transfer Ratio IC/IF at VCE = 5.0 V, 25 C and Collector-Emitter Leakage Current by dash number Parameter Current Transfer Ratio Test condition IF = 10 mA Part CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 IF = 1.0 mA CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 40 63 100 160 13 22 34 56 30 45 70 90 Typ. Max 80 125 200 320 Unit % % % % % % % % Document Number 83598 Rev. 1.4, 26-Oct-04 www.vishay.com 3 CNY117F Vishay Semiconductors Switching Characteristics Linear operation (without saturation) Parameter Turn-on time Rise time Turn-off time Fall time Cut-off frequency Test condition IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W IF = 10 mA, VCC = 5.0 V, RL = 75 W Test condition IF = 20 mA IF = 10 mA IF = 5.0 mA Rise time IF = 20 mA IF = 10 mA IF = 5.0 mA Turn-off time IF = 20 mA IF = 10 mA IF = 5.0 mA Fall time IF = 20 mA IF = 10 mA IF = 5.0 mA Symbol ton tr toff tf fCO Min Typ. 3.0 2.0 2.3 2.0 250 Max Unit s s s s kHz Switching operation (with saturation) Parameter Turn-on time Part CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 CNY117F-1 CNY117F-2 CNY117F-3 CNY117F-4 Symbol ton ton ton ton tr tr tr tr toff toff toff toff tf tf tf tf Min Typ. 3.0 4.2 4.2 6.0 2.0 3.0 3.0 4.6 18 23 23 25 11 14 14 15 Max Unit s s s s s s s s s s s s s s s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 175 150 V F - Forward Voltage ( V ) P -Power Dissipation (mW) tot 1.5 1.4 1.3 0C 1.2 1.1 1.0 0.9 0.8 0.7 0.10 17577 125 Detector 100 75 LED 50 25 0 0 20 40 60 80 100 120 -55 C 25 C 50 C 110 C 1.00 10.00 100.00 18777 T - Ambient Temperature ( C ) amb IF - Forward Current ( mA ) Figure 1. Permissible Power Dissipation vs. Ambient Temperature Figure 2. Forward Voltage vs. Forward Current www.vishay.com 4 Document Number 83598 Rev. 1.4, 26-Oct-04 CNY117F Vishay Semiconductors CTR Norm - Normalized Output Current 50 45 IC - Collector Current (mA) 1.2 IF = 10 mA 1.0 5 mA 0.8 0.6 0.4 0.2 Normalized to IF = 10 mA, Tamb = 25_C, VCE= 0.4 V, saturated 1 mA 40 35 30 25 20 15 10 5 0 IF = 30 mA IF = 20 mA IF = 15 mA IF = 10 mA IF = 5 mA I F = 1 mA 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 18733 VCE - Collector Emitter Voltage (V) 17578 0.0 -55 -35 -15 5 25 45 65 85 105 125 Tamb - Ambient Temperature ( C ) Figure 3. Collector Current vs. Collector Emitter Voltage Figure 6. Normalized Current Transfer Ratio vs. Ambient Temperature CTR Norm - Normalized Output Current 10000 1000 100 24 V 10 1 0.10 -75 18734 1.2 IF = 10 mA 1.0 0.8 0.6 0.4 0.2 Normalized to IF = 10 mA, Tamb = 25_C, VCE= 5 V, non-saturated 25 45 65 85 105 125 5 mA 40 V I CE0 ( nA ) 12 V 1 mA 25 75 125 Tamb - Ambient Temperature ( C ) -25 0.0 -55 -35 -15 5 17579 Tamb - Ambient Temperature ( C ) Figure 4. Collector to Emitter Dark Current vs. Ambient Temperature Figure 7. Normalized Current Transfer Ratio vs. Ambient Temperature CTR Norm - Normalized Output Current 30 1.2 -2 -1 1.0 0.8 0.6 0.4 0.2 0.0 0.10 Normalized to IF = 10 mA, Tamb = 25_C, VCE= 5 V, non-saturated 1.00 10.00 100.00 -3 -4 20 I C (mA) 25 mA 10 mA 10 5 mA 2 mA 0 0.0 0.1 0.2 0.3 0.4 1 mA 0.5 0.6 18735 VCE - Collector to Emitter Voltage (V) 17580 IF - Forward Current ( mA ) Figure 5. Normalized Current vs. Collector Emitter Saturation Voltage Figure 8. Normalized CTR vs. Forward Current Document Number 83598 Rev. 1.4, 26-Oct-04 www.vishay.com 5 CNY117F Vishay Semiconductors CTR Norm - Normalized Output Current 1.2 -1 1.0 0.8 0.6 -3 0.4 0.2 0.0 0.10 -4 Normalized to IF = 10 mA, Tamb = 25_C, VCE= 0.4 V, saturated 1.00 10.00 IF - Forward Current ( mA ) 100.00 -2 Switching Time (s) 1000 Pulse Width = 100 ms IF = 10 mA Duty Cycle = 50 % 100 trise 10 tfall 1 0.1 18781 1 10 100 17584 R L - Load Resistance (k) Figure 9. Normalized CTR vs. Forward Current Figure 12. Time Switching vs. Load Resistance 1000.00 0C 25 C 100.00 50 C CNY-3,-4 CNY-1,-2 Log t on/off - Switching time, s fctr - Cut-off Frequency (kHz) 10 9 8 ton@ IF = 10 mA 7 6 5 4 3 2 1 10 Pulse Width = 100 ms I F = 10 mA R L = 1000 Duty Cycle = 50 % toff @ IF = 10 mA 10.00 0C 25 C 50 C Tamb = 25_C, VCE= 5 V, non-saturated 10.00 100.00 1.00 0.10 17583 1.00 IC - Collector Current ( mA ) 18782 100 1000 10000 Log RBE - Base Emitter Resistance () Figure 10. Cut-off Frequency vs. Collector Current Figure 13. Switching Time vs. Base Emitter Resistance 1000 Pulse Width = 100 ms IF = 10 mA Duty Cycle = 50 % Switching Time (s) 10 Pulse Width = 100 ms IF = 5 mA 9 8 RL = 1000 , Duty Cycle = 50 % ton@ IF = 5 mA 100 t off 10 ton Switching Time, ms 7 6 5 4 3 2 toff @ IF = 5 mA 1 0.1 18780 1 1 10 R L - Load Resistance (k) 100 18783 10 100 1000 10000 RBE - Base Emitter Resistance () Figure 11. Time Switching vs. Load Resistance Figure 14. Switching Time vs. Base Emitter Resistance www.vishay.com 6 Document Number 83598 Rev. 1.4, 26-Oct-04 CNY117F Vishay Semiconductors 1.2 110 C 1.1 Normalized h FE 50 C 1.0 25 C 0C 0.9 0.8 0.7 0.10 -55 C Normalized to IB = 20 A, Tamb = 25_C, VCE= 5 V, non-saturated 1.00 10.00 IB - Base Current ( mA ) 100.00 17581 Figure 15. Normalized HFE vs. Base Current 1.5 1.4 1.3 Normalized h FE 110 C 50 C 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.01 25 C 0C -55 C Normalized to IB = 20 A, Tamb = 25_C, VCE= 0.4 V, saturated 0.10 1.00 10.00 100.00 17582 IB - Base Current ( mA ) Figure 16. Normalized HFE vs. Base Current 10 1 Normalized Photocurrent 0 C 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.01 18786 25 C Normalized to IF = 10 mA, Temp = 25C and VCE = 5 V 50 C 75 C 0.1 1 10 IF - Forward Current (mA) 100 Figure 17. Normalized Photocurrent vs. Forward current Document Number 83598 Rev. 1.4, 26-Oct-04 www.vishay.com 7 CNY117F Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 3 .248 (6.30) .256 (6.50) 4 2 1 5 6 ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) i178004 .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) .300 (7.62) typ. 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .010 (.25) typ. .300-.347 (7.62-8.81) .114 (2.90) .130 (3.0) www.vishay.com 8 Document Number 83598 Rev. 1.4, 26-Oct-04 CNY117F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83598 Rev. 1.4, 26-Oct-04 www.vishay.com 9 |
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